The energy distribution of electrons photoemitted from the surface of ultrahigh-vacuum-cleaved silicon has been studied as a function of bulk doping and controlled oxygen exposure. The high sensitivity of surface states to oxygen has been utilized to observe the saturation of dangling bonds, identify the formation of the first monolayer of oxide, and to monitor the growth of the first few silicon dioxide layers. Comparison is made with the electron-spin-resonance signal.
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Wagner et al. (1974) studied this question.
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