Randomized trial analyzes optical gain in fiber optic systems, suggesting effective design for long-haul transmission.
This paper presents the design and simulation of an InGaAs/GaAsSb single quantum well (SQW) structure for optical communication applications at 300 K. The electronic band structure, carrier transport, and optical gain characteristics of the proposed structure are analyzed on a GaAs substrate. Simulation results show efficient carrier confinement and radiation emission at 1550 nm with a high optical gain of approximately 6500 cm⁻¹. The obtained results demonstrate the suitability of the proposed SQW structure for fiber optic communication systems, including WDM/DWDM and long-haul optical transmission applications.
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Vijay et al. (2025) studied this question.
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