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Identifies the enhancement of valley-related Hall effects in ferromagnetic monolayers, suggesting their application in valleytronics.
orbitals in magnetic hexagonal lattices, thereby driving transitions between distinct valley-related multiple Hall effects. Guided by this general mechanism, we identify ferromagnetic hexagonal ScX (X = S, Se, Te) and TiY (Y = N, P, As) monolayers as ideal candidate systems where this complex phase evolution is realizable under minute biaxial tensile strains (<1.2%). Specifically, these materials exhibit a sequential topological phase transition following the trajectory of ferrovalley (FV) → half-valley metal (HVM) → QAVH → HVM → FV, where the QAVH phase features a nonzero Chern number and chiral spin-valley locking. Our work establishes a unified mechanism for valley-dependent Hall effects and positions the ScX and TiY families as promising platforms for strain-engineered, low-dissipation valleytronics.
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Li et al. (2026) studied this question.
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