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Measurements of the current-voltage characteristics of GaAs-AlxGa1−xAs heterojunction layers are reported. The experimental results are consistent with the idea of real-space transfer of the electrons out of the GaAs into the AlxGa1−xAs under hot-electron conditions. Current saturation and negative differential resistance are observed as predicted by Monte Carlo simulations.
Keever et al. (Thu,) studied this question.