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November 13, 2002

A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate

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Authors

YAYuji AndoJuntendo UniversityYOYasuhiro OkamotoKagoshima UniversityHMHiroyuki MiyamotoRIKEN Center for Brain Science

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Ando et al. (2002) studied this question.

synapsesocial.com/papers/6a18b8718dcaf40f45cfae24https://doi.org/10.1109/iedm.2001.979516
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