Experimental investigation shows stable resistive switching characteristics in tin oxide memristors, indicating potential applications.
In this work, we investigate resistive switching properties of tin oxide (SnOx) memristors. The SnOx resistance change layer was deposited using mist chemical vapor deposition (mist CVD), which is an open-air non-vacuum process. The fabricated device exhibits stable I-V curve behavior for 500 cycles, with an ON/OFF ratio of approximately 10 and forming-free resistive switching characteristics.
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Sugisaki et al. (2026) studied this question.
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