Wide bandgap power devices represent a new frontier for More-Electric-Aircraft (MEA) since they can operate with high junction temperature and with reduced switching losses at high switching frequencies. It allows reduction of the cooling system size and high power density. At present the application of wide bandgap devices to MEA power converters is still limited by their rated current. In this paper a feasibility study of a 270V/28V SiC MOSFET Dual Active Bridge (DAb) converter for MEA is presented. It is based on the analysis of SiC power devices currently available on the market. DAB converter performance optimization is obtained through the use of the Trapezoidal Modulation (TM) instead of the standard Phase Shift Modulation (PSM) and thanks to a proper selection of the power devices. These conclusions are supported by thorough results.
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Pugliese et al. (2016) studied this question.
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