Effects of Modified Precursor Solution on Microstructure of (Y,Yb)MnO₃/HfO₂/Si

Ferroelectric/insulator/silicon structures were prepared using (Y,Yb)MnO3 films as ferroelectrics and HfO2 thin films as insulators through alkoxy-derived precursor solutions. The HfO2 solution was chemically modified in order to decrease the number of heating cycles required. The HfO2 films prepared using a partially hydrolyzed alkoxide solution had a uniform structure. From the results of measurements of the roughness level and refractive index of the HfO2 films, the partial hydrolysis of the HfO2 solution was found to be effective for the formation of a uniform microstructure in a thin insulator film. (Y,Yb)MnO3/HfO2/Si structures were constructed using the resultant HfO2 thin films prepared using the modified solutions.