The energy distribution of electron states at SiC/SiO2 interfaces produced by oxidation of various (3C, 4H, 6H) SiC polytypes is studied by electrical analysis techniques and internal photoemission spectroscopy. A similar distribution of interface traps over the SiC bandgap is observed for different polytypes indicating a common nature of interfacial defects. Carbon clusters at the SiC/SiO2 interface and near-interfacial defects in the SiO2 are proposed to be responsible for the dominant portion of interface traps, while contributions caused by dopant-related defects and dangling bonds at the SiC surface are not observed.
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Afanas’ev et al. (1997) studied this question.
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