Cerium-Doped Ferroelectric Hf 0.5 Zr 0.5 O 2 Memristors for Low-Variability Multilevel Memory and Synaptic Plasticity

Xiaoxia Yu; Jiaqi Li; Jinhao Guan; Yumeng Bai; Jun Miao; Lihong Li; Jinxia Deng; Qiang Li; Kun Lin; Xianran Xing

doi:10.1039/d6qi00464d

January 1, 2026Inorganic Chemistry Frontiers

Cerium-Doped Ferroelectric Hf 0.5 Zr 0.5 O 2 Memristors for Low-Variability Multilevel Memory and Synaptic Plasticity

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Key Points

The aim is to evaluate the performance of cerium-doped ferroelectric memristors for improved multilevel memory and synaptic plasticity.
Synthesis of cerium-doped Hf0.5Zr0.5O2 memristors
In-depth analysis of switching stability and variability in memory performance
Evaluations on the ability for synaptic plasticity through electrical stimulation
Demonstrated low variability in multilevel memory storage compared to conventional memristors
Exhibited enhanced synaptic plasticity characteristics as indicated by reduced switching thresholds
Achieved stable formation and rupture of conductive pathways, improving overall reliability

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Implication

Examines synaptic plasticity and multilevel memory in memristors, suggesting enhanced stability.

Abstract

Memristors have attracted broad interest for multilevel data storage and neuromorphic computing. However, in many conventional memristors, switching relies on the formation and rupture of conductive pathways, whose instability limits...

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Yu et al. (2026) studied this question.

synapsesocial.com/papers/6a1a7f990307b78509431de9 https://doi.org/10.1039/d6qi00464d

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Cerium-Doped Ferroelectric Hf 0.5 Zr 0.5 O 2 Memristors for Low-Variability Multilevel Memory and Synaptic Plasticity

Key Points

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Implication

Abstract

Discussion

Cite This Study

Cerium-Doped Ferroelectric Hf 0.5 Zr 0.5 O 2 Memristors for Low-Variability Multilevel Memory and Synaptic Plasticity

Key Points

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Implication

Abstract

Discussion

Cite This Study

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