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Photoluminescence spectra from Al0.37Ga0.63As/AlAs multiple quantum well structures with staggered band alignments are presented which provide the first direct optical measure of the valence-band offset at a semiconductor heterojunction. The experiment takes advantage of the crossover occurring at a critical aluminum concentration above which the indirect X minima in the AlAs become the lowest energy conduction bands in the system, and recombination occurs across the interface. The resulting emission fixes the valence-band offset at ΔEv =342±4 meV for this structure.
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Dawson et al. (1986) studied this question.
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