Answers are grounded in this paper and cite their sources.
Resistance measurements have been made on low-resistivity thin Cu films (50-500 {}) between 1 and 20 K. A logarithmic temperature dependence of the resistance is observed. For a resistance per square of $R<20$ {Ω}/{}, good agreement is obtained with the localization theory. The amplitude of the resistance variation and its large magnetic-field dependence exclude possible Coulomb-interaction effects predicted by Altshuler et al. as the main source of the observed behavior.
No takes yet. Share an insight, caveat, or question.
Dries et al. (1981) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: