Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 8, 2015Applied Physics Letters

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

View Full Paper
Ask AI
Bookmark
Share

Authors

APAmit PrakashNational Institute of Technology KurukshetraDDDamien DeleruyelleUniversité Claude Bernard Lyon 1JSJeonghwan SongSK Group (United States)

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Prakash et al. (2015) studied this question.

synapsesocial.com/papers/6a1bed63d54006be995f3e10https://doi.org/10.1063/1.4922446
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1High switching endurance in TaOx memristive devices2010 · 639 citations
  2. 2Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling2012 · 496 citations
  3. 3A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture2012 · 79 citations
  4. 4A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)2012 · 77 citations
  5. 5Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory2011 · 289 citations