High-Performance InAs Nanowire MOSFETs

In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al 2 O 3 /HfO 2 bilayer was introduced in the high- process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm 2 (V D = 0.5 V) . For a nominal L G = 100 nm, we observe an extrinsic transconductance (g_m) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at V D = 10 mV .