We experimentally demonstrate on-chip active photonic devices fabricated from deposited polycrystalline silicon, which can be used for monolithic three-dimensional integration of optical networks. The demonstrated modulator is based on all-optical carrier injection in a micrometer-size resonator and has a modulation depth of 10dB and a temporal response of 135ps. Grain boundaries in the polycrystalline silicon (polysilicon) material result in faster electron-hole recombination, enabling a shortened carrier lifetime and a faster optical switching time compared to similar devices based on crystalline silicon.
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Preston et al. (2008) studied this question.
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