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Theoretical investigation shows how electric fields affect excitons in Xenes-based structures, suggesting new control methods.
In this work, we propose novel van der Waals heterostructures composed of Xenes, transition metal dichalcogenides (TMDCs), phosphorene, and transition metal trichalcogenides (TMTCs), which are separated by insulating hexagonal boron nitride (hBN) layers. We theoretically investigate the behavior of Rydberg indirect excitons in Xenes/hBN/TMDC, Xenes/hBN/phosphorene and Xenes/hBN/TMTC heterostructures subjected to parallel external electric and magnetic fields that are oriented perpendicular to the layers. By incorporating both isotropic and anisotropic materials, we demonstrate that excitonic properties can be effectively tuned through the external field strengths and the heterostructure design. Our results show that the exciton reduced mass and the binding energy increase with the electric-field strength, while enhanced dielectric screening from additional hBN layers reduces the binding energy. Anisotropic materials exhibit distinct excitonic responses, including variations in diamagnetic behavior. Moreover, the diamagnetic energy contributions and coefficients decrease with stronger electric fields but increase with the number of hBN layers. Finally, we explore the potential of time-periodic electric fields with Floquet band-structure engineering. These findings provide a comprehensive framework for controlling excitonic phenomena in low-dimensional materials.
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Kezerashvili et al. (2025) studied this question.
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