Logarithmic corrections to two-dimensional transport in silicon inversion layers

It is shown that the logarithmic corrections to the two-dimensional conductance arise from both interaction and incipient localisation effects. A transition between these two type of behaviour can be achieved by a change of electron temperature in the presence of a magnetic field, or just by the application of a magnetic field. The magnetic field suppresses the weak localisation and enhances the effects of the interaction. Results on conductance, magnetoconductance and Hall effect are presented and discussed.