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The increasing use of large embedded memories in Systems-on-Chips requires automatic memory reconfiguration to avoid the need for external accessibility. In this work, effective diagnostic memory tests of linear order O(N) are proposed that enable memory reconfiguration, and their diagnostic capabilities are analyzed. In particular, these tests allow single-cell faults to be distinguished from multiplecell faults, such as coupling faults. In contrast to conventional O(N) tests, all cells involved in a fault are detected and localized, which allows complete reconfiguration using minimal-area BIST hardware that compares favorably with other BIST designs.
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Bergfeld et al. (2000) studied this question.
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