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The development of lead zirconate titanate (PZT)-based capacitors has been a long time goal of ferroelectric random access memories (FRAM). However, PZT-based perovskites with common platinum (Pt) electrodes have suffered from a significant reduction of the remanent polarization (Pr) after a certain number of read/write cycles (electrical fatigue). We now report the development of fatigue-free lanthanum-modified PZT capacitors using common Pt electrodes. The capacitors fabricated at 580 °C by applying a PZT seed layer exhibited fatigue-free behavior up to 6.5×1010 switching cycles, a quite stable charge retention profile with time, and comparatively high Pr values, all of which assure their suitability for practical FRAM applications.
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Shannigrahi et al. (2001) studied this question.
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