High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition –Impurity Doping and 590 nm (Orange) Electroluminescence–

Improvement in doping characteristics and luminescence efficiency for MOCVD grown (Al x Ga 1- x ) 0.5 In 0.5 P was obtained by introducing a simple air-lock system. A few hundredths Ωcm resistivity was obtained for the entire aluminum composition n-type (Al x Ga 1- x ) 0.5 In 0.5 P and less than a few tenths Ωcm resistivity was obtained for p-type (Al x Ga 1- x ) 0.5 In 0.5 P with x 0.6. 590 nm orange electroluminescence from double heterostructure diodes and 555 nm green photoluminescence, the shortest wavelengths ever-reported for (Al x Ga 1- x ) 0.5 In 0.5 P system, were observed.