Organometallic Vapor Phase Epitaxial Growth of In1-xGaxP (x ∼0.5) on GaAs

In 1- x Ga x P ( x ∼0.5) layers have been grown on GaAs by low-pressure vapor phase epitaxy using triethylindium (TEI), triethylgallium (TEG) and phosphine. The observation of surface morphology and the measurements of peak energy and half-width of photoluminescence spectra indicate that high quality layers lattice-matched to GaAs substrates can be grown by controlling the substrate temperature and the TEI and TEG flows. The best sample has shown a room-temperature photoluminescence efficiency comparable to that of LPE layers of the same composition.