Epitaxial layers of single‐crystal have been deposited on substrates by an open‐tube vapor‐growth technique. The dependence of alloy composition on the deposition temperature and the relative amounts of In and Ga transported have been established. The effects of substrate preparation, reaction temperatures, deviations from equilibrium, and gas‐phase mixing on achieving material with controlled composition, purity, doping, and homogeneity have been investigated. In situ vapor‐grown p‐n junction structures employing Se and Zn as the respective n‐ and p‐type dopants have been prepared with sufficient perfection to permit fabrication of efficient visible‐light‐emitting diodes and injection lasers.
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Sigai et al. (1973) studied this question.