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This paper describes in detail the properties of vapor-grown double-heterojunction lasers of Ga(As,P)/(In,Ga)P with room-temperature threshold current densities as low as 3400 A/cm2 at 7000 Å and 6600 A/cm2 at 6800 Å. These thresholds are three to eight times smaller than those of (Al,Ga)As lasers in this wavelength range due to the shorter-wavelength direct-indirect transition in Ga(As,P). The optical and electrical characteristics of the Ga(As,P)/(In,Ga)P lasers are found to be similar to those of (Al,Ga)As, with fundamental transverse-mode operation to 70 °C, and spontaneous carrier lifetimes between 5 and 8 nsec typically observed at low current densities.
Kressel et al. (Thu,) studied this question.