Vapor-grown epitaxial structures of In0.5Ga0.5P/GaAs have yielded heterojunction laser diodes with room-temperature threshold current densities as low as 8000 A/cm2 for a 2.5-μm GaAs laser cavity width. Differential external quantum efficiencies as high as 30% have been attained. Measurements suggest the existence of internally ``trapped'' laser modes due to the large refractive-index discontinuity at the In0.5Ga0.5P–GaAs interfaces.
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Nuese et al. (1974) studied this question.
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