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Lattice-matched InAsSb has been grown by molecular beam epitaxy onto GaSb. The epitaxial material was investigated using double crystal X-ray diffraction and photoluminescence spectroscopy. Photoluminescence emission was detected at room temperature near 4.2 mu m which is of interest for the fabrication of long wavelength light sources suitable for infrared gas detection. The temperature dependent characteristics of the photoluminescence were also investigated.
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Elies et al. (1993) studied this question.
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