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February 15, 1985Applied Physics Letters

p-n junction formation in InSb and InAs1−xSbx by metalorganic chemical vapor deposition

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Authors

PCP.K. ChiangAU Optronics (Taiwan)SBS. M. BedairNorth Carolina State University

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Chiang et al. (1985) studied this question.

synapsesocial.com/papers/6a6f2dc86ceb2bbd16dfa01ehttps://doi.org/10.1063/1.95640
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Growth of InSb and InAs1 − x Sb x by OM‐CVD1984 · 76 citations
  2. 2OPTICAL ENERGY-GAP VARIATION IN InAs–InSb ALLOYS1964 · 84 citations
  3. 3Organometallic VPE Growth of InAs1-xSbxon InAs1980 · 79 citations
  4. 4Liquid Phase Epitaxial Growth of InAs[sub 1−x] Sb[sub x]1971 · 122 citations
  5. 5Effect of surface recombination and channel on P-N junction and transistor characteristics1962 · 150 citations