Analysis of novel resonant electron transfer triode device using metal-insulator superlattice for high speed response

A novel resonant electron transfer triode (RETT), which uses electron resonant tunneling utilizing a metal insulator multilayer superlattice as an artificial semiconductor, is proposed and its basic properties are estimated theoretically. Possibility for high speed response in room temperature, such as response time <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">τ = 0.25-0.38</tex> ps, cutoff frequency <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fT = 420-640</tex> GHz, maximum oscillation frequency <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fₘₐₓ = 530-610</tex> GHz, and the common-emmitter current gain <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">β = 8- 34</tex> are expected theoretically with the transverse area of 1000 × 1000 Å 2 and the total base length of 30-100 Å. It is also shown theoretically that this triode has common transistor static characteristics.