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The In0.53Ga0.47As∕AlAs0.56Sb0.44 heterostructure system is of significant interest for the development of high-performance intersubband devices due to its very large conduction band offset (ΔEc∼1.6eV) and lattice-matched compatibility with well-established InP-based waveguide technology. In this letter, we report the realization of In0.53Ga0.47As∕AlAs0.56Sb0.44 quantum cascade lasers emitting at λ∼4.3μm. The highest-performance devices have low-temperature (20K) threshold currents of ∼6kA∕cm2 and display laser action up to a maximum temperature of 240K, with a characteristic temperature of T0∼150K.
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Revin et al. (2004) studied this question.
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