What question did this study set out to answer?

To synthesize and evaluate O-band emitting InAs/GaAs quantum dots grown on CMOS-compatible 300 mm Ge/Si(001) substrates via metal organic chemical vapor deposition.

December 7, 2020NanomaterialsOpen Access

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

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Authors

OAOumaïma Abouzaid HMH. Mehdi MMM. Martin

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Overview

Experimental study demonstrates uniform 1.3-micrometer light emission from InAs quantum dots on 300 mm silicon wafers, highlighting compatibility with standard semiconductor manufacturing.

Key Points

To synthesize and evaluate O-band emitting InAs/GaAs quantum dots grown on CMOS-compatible 300 mm Ge/Si(001) substrates via metal organic chemical vapor deposition.
Grew three-stacked InAs/GaAs quantum dots on quasi-nominal 300 mm Ge/Si(001) and native GaAs(001) substrates using metal organic chemical vapor deposition.
Characterized structural and optical properties via atomic force microscopy, transmission electron microscopy, room-temperature photoluminescence mapping, and numerical modeling.
Wafer-scale micro-photoluminescence mapping across the 300 mm Ge/Si substrate showed homogeneous room-temperature emission centered at 1.30 ± 0.04 µm.
Buried quantum dots adopted a truncated pyramidal geometry with average base widths of 29 nm and heights of 4 nm.
Quantum dots on Ge/Si substrates exhibited morphology similar to dots on GaAs substrates, alongside slightly increased dimensions and lower luminescence intensity.

Cite This Study

Abouzaid et al. (2020) studied this question.

synapsesocial.com/papers/6a1ebc21bf2a5d44faaf3fdd https://doi.org/10.3390/nano10122450

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December 7, 2020NanomaterialsOpen Access

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

View Full Paper

Ask AI

Bookmark

Authors

OAOumaïma Abouzaid HMH. Mehdi MMM. Martin

Discussion

Member takes

Overview

Experimental study demonstrates uniform 1.3-micrometer light emission from InAs quantum dots on 300 mm silicon wafers, highlighting compatibility with standard semiconductor manufacturing.

Key Points

To synthesize and evaluate O-band emitting InAs/GaAs quantum dots grown on CMOS-compatible 300 mm Ge/Si(001) substrates via metal organic chemical vapor deposition.
Grew three-stacked InAs/GaAs quantum dots on quasi-nominal 300 mm Ge/Si(001) and native GaAs(001) substrates using metal organic chemical vapor deposition.
Characterized structural and optical properties via atomic force microscopy, transmission electron microscopy, room-temperature photoluminescence mapping, and numerical modeling.
Wafer-scale micro-photoluminescence mapping across the 300 mm Ge/Si substrate showed homogeneous room-temperature emission centered at 1.30 ± 0.04 µm.
Buried quantum dots adopted a truncated pyramidal geometry with average base widths of 29 nm and heights of 4 nm.
Quantum dots on Ge/Si substrates exhibited morphology similar to dots on GaAs substrates, alongside slightly increased dimensions and lower luminescence intensity.

Cite This Study

Abouzaid et al. (2020) studied this question.

synapsesocial.com/papers/6a1ebc21bf2a5d44faaf3fdd https://doi.org/10.3390/nano10122450

View Full Paper

Ask AI

Bookmark