High-speed and compact motors operate at low-voltage and large-current. However, there are few studies that have intentionally applied Si IGBTs and SiC MOSFETs, widely used for high-voltage and large-current applications, to low-voltage and large-current applications. This study aims to apply Si IGBTs and SiC MOSFETs in the design of a drive system for high-speed and compact motors, and clarify the differences in characteristics between these switching devices. The results of this paper reveal that the current path switches depending on the characteristics of each device, leading to variations in loss generation.
Kamahara et al. (2026) studied this question.