Demonstrates improved short-circuit capability in IGBT, suggesting enhanced reliability.
Based on the conventional IGBT structure, this paper adopts the dummy trench gate structure design. In the dummy trench gate area, the N+ area is not injected and Pwell region is floating. The simulation results show that the proposed new IGBT structure has been significantly improved compared with the traditional design. The on-state voltage drop and enhanced short-circuit capability.
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Chen et al. (2026) studied this question.
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