Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled p-Type Dummy Region

A novel trench insulated gate bipolar transistor (TIGBT) with a shallow emitter trench controlled P-type dummy region (STCP-TIGBT) is proposed. Compared with the conventional TIGBT with floating P-type dummy region (CFP-TIGBT) and TIGBT with floating P-type dummy region and normally on hole path (HFP-TIGBT), the proposed STCP structure not only speeds up the extraction of excessive holes in the turn-off process but also reduces the Miller plateau charge <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(Qgc)</tex> . Therefore, both the power loss and electromagnetic interference (EMI) noise are significantly reduced. Simulation results show that the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Qgc</tex> of the proposed device is only 501 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nC/cm²</tex> , which is reduced by 58.5% and 26.4% when compared to the CFP-TIGBT and HFP-TIGBT, respectively. At same on-state voltage drop <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(Vceon)</tex> of 1.02 V, the turn-off loss <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(Eoff))</tex> of the proposed device is 13.49 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mJ/cm²</tex> , which is 64.6% and 67.6% less than those of the CFP-TIGBT and HFP-TIGBT, respectively. Moreover, the reverse recovery <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dVₐₖ/dt</tex> of the freewheeling diode at same turn-on loss <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(Eₒₙ)</tex> of 31.8 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mJ/cm²</tex> for the proposed STCP-TIGBT is only 2.15 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">kV/μ s</tex> , which is reduced by 91.3% and 57.2% when compared to 24.69 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">kV/μ s</tex> and 5.02 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">kV/μ s</tex> for the CFP-TIGBT and HFP-TIGBT, respectively. The reduced <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV/dt</tex> significantly suppresses the electromagnetic interference noise generated by the proposed device.