Coordinated sub-cycle modulation atomic layer deposition of atomically homogeneous GeTe 9 thin films for high-performance OTSs

Key Points

• The research aims to develop atomically homogeneous GeTe thin films using a novel atomic layer deposition approach.
• Utilized coordinated sub-cycle modulation atomic layer deposition (ALD) to synchronize deposition with in situ diffusion.
• Focused on the structural properties of amorphous GeTe films for optimal performance in OTS applications.
• Successfully created atomically homogeneous amorphous GeTe thin films.
• Achieved high performance in OTS applications, indicating potential for 3D integration.