Combined atomic layer deposition and chemical vapor deposition enhance OTS performance in GeTe films, indicating potential for 3D integration.
This study advances selector device development by enabling low-temperature, composition-tunable GeTe x film deposition for 3D integration, suppressing substrate-dependent growth via passivation layers, and demonstrating robust OTS performance with >10 5 cycles and detailed material/device analysis.
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Cho et al. (2025) studied this question.
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