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April 1, 1989Japanese Journal of Applied Physics

P-Type Conduction in ZnS Grown by Vapor Phase Epitaxy

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Authors

SISeishi IidaNagaoka UniversityTYT. YatabeNagaoka University of TechnologyHKHitoshi KintoNiigata College of Technology

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Iida et al. (1989) studied this question.

synapsesocial.com/papers/6a202dff6ed993cb49fc0033https://doi.org/10.1143/jjap.28.l535
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase Epitaxy1988 · 91 citations
  2. 2Nitrogen as shallow acceptor in ZnSe grown by organometallic chemical vapor deposition1982 · 60 citations
  3. 3p-n junction zinc sulfo-selenide and zinc selenide light-emitting diodes1975 · 85 citations
  4. 4p-type conduction in ZnSe grown by temperature difference method under controlled vapor pressure1986 · 68 citations
  5. 5Shallow N acceptor in N+-implanted ZnSe1982 · 38 citations