Free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 (PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition. X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an a-axis preferred orientation. The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm, but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film. The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm3 and 54.5%, respectively. In contrast, after removing the substrate, the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm3 and 67.9%, respectively.
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Zuo et al. (2016) studied this question.
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