The growth, diffusion, and coarsening of Si on Si(001) have been investigated with scanning tunneling microscopy (STM). A diffusion coefficient for Si has been determined. Anisotropy in the island shapes during epitaxy is shown to be principally a growth structure due to an anisotropic accommodation coefficient. Diffusional anisotropy is small. An ordered ‘‘diluted-dimer’’ structure is observed at low coverages and temperatures.
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Mo et al. (1990) studied this question.