P‐20: Performance Improvement for High Mobility Amorphous Indium‐Zinc‐Tin‐Oxide Thin‐Film Transistors

In this work, the relation between post annealing temperature and electrical characteristic on high mobility a‐IZTO TFTs was investigated. The 400°C‐annealed a‐IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm 2 /Vs, V th of ‐2.8 V and sub‐threshold swing of 0.25 V/decade. Both shallow trap states of a‐IZTO film and interface trap states at the a‐IZTO/SiO 2 interface decreased to 2.16 × 10 17 cm −3 eV −1 and 4.38 × 10 12 cm −2 eV −1 , respectively with 400°C annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a‐IZTO TFTs.