Simulation of the long-period conductivity relaxation (LCR) phenomenon in double-layer semiconductor structures

The main peculiarities of light-induced long-time conductivity relaxations (persistent conductivity) are simulated on a structure representing the GaAs epitaxial film on the semi-insulating substrate of the same material. The similarity of the photoconductivity characteristic features in the above-mentioned system and in naturally-inhomogeneous semiconductor is proved both theoretically and experimentally. [Russian Text Ignored]