The model of a large-scale potential relief is used to explain the most striking effects typical for the amorphous semiconductor, the switching and the memory. The potential relief was produced experimentally in a classical crystal semiconductor, n-germanium, by compensation with fast neutrons. This results in the appearance of properties characteristic for amorphous semiconductors. Both phenomena, the switching and the memory, are revealed. Also other effects essential in context with the ideas developed, are observed. The experimental investigations performed reveal an extensive analogy between highly compensated crystal and amorphous semiconductors.
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Ryvkin et al. (1973) studied this question.
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