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Fundamental characteristics of a photoelectrochemical cell using p‐type porous‐Si layer (PSL) as a semiconductor photoelectrode were measured. The PSL electrode exhibited stable photodiode characteristics. The increase in the PSL thickness was very useful in suppressing the dark current, although it resulted somewhat in reducing the photosensitivity, due to the increase in surface recombination losses of photogenerated carriers.
Koshida et al. (Fri,) studied this question.