Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 20, 2013IEEE Journal of Solid-State Circuits

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

View Full Paper
Ask AI
Bookmark
Share

Authors

MCMeng‐Fan ChangSSShyh-Shyuan SheuKLKu-Feng Lin

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Chang et al. (2013) studied this question.

synapsesocial.com/papers/6a20aee6055a1cd247eb86aehttps://doi.org/10.1109/jssc.2012.2230515
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap2009 · 202 citations
  2. 2A forming-free WO<inf>x</inf> resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability2010 · 74 citations
  3. 3Noise-Immune Embedded NAND-ROM Using a Dynamic Split Source-Line Scheme for VDDmin and Speed Improvements2010 · 6 citations
  4. 4A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control2007 · 113 citations