A new single-photon avalanche diode (SPAD) with double-epitaxial silicon structure is presented. The device has a time response with short diffusion tail (270 ps time-constant), high resolution (45 ps FWHM, full-width at half maximum of the peak) and low noise, i. e. low dark-count rate.
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Lacaita et al. (1989) studied this question.
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