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The relaxed (110) surface electronic structure of GaAs is calculated within the tight-binding model. The symmetry and dispersion of the surface states are compared to those measured by angle-resolved photoemission experiments. Variations in photoemission intensity with measurement geometry are related to matrix-element modulation effects and it is shown that angle-resolved measurements can give information on the symmetry of surface states.
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D. J. Chadi (1978) studied this question.
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