Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant2003 · 124 citations
2. 2Analysis of ultrathin SiO2 interface layers in chemical vapor deposition of Al2O3 on Si by in situ scanning transmission electron microscopy2003 · 34 citations
3. 3Direct tunneling leakage current and scalability of alternative gate dielectrics2002 · 214 citations
4. 4Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition2001 · 185 citations
5. 5Improvement in Al2O3 dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique2002 · 170 citations