Transient current response in Pd-SiO2-Si structures during hydrogen absorption and desorption

Transient current measurements have been performed on Pd-gate metal-oxide-semiconductor capacitors at zero bias and room temperature, during hydrogen absorption and desorption. It is shown that a simple relationship among transient current, flat-band voltage, and time-dependent capacitance can fit the experimental data. Different possible origins of the transient current phenomenon are considered and discussed and the role played by the Na+ in delaying the transient current response is also illustrated.