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The C-V characteristics of palladium gate MOS capacitors change significantly when exposed to an air ambient containing up to 4% hydrogen. From these experiments, it is concluded that these changes are due to the lowering of the palladium work function (by as much as 1 V) brought on by the formation of palladium hydride. Mobile charges in the oxide do not contribute to the observed C-V shifts brought about by exposure to hydrogen.
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Steele et al. (1976) studied this question.
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