Two-dimensional conductivity in the contact regions of silicon MOSFETs

The authors present evidence showing that two-dimensional conduction giving rise to Shubnikov-de Haas oscillations can occur, not only in the inversion layer of Si MOSFETs, but also in the diffused contact regions under the gate. This gives rise to additional splittings and distortion of the Shubnikov-de Haas samples when a large negative substrate bias is applied.