Simulation of SAF-enhanced multilayered STT-MRAM structures

The reliability of multilayered spin-transfer torque magnetoresistive random access memory with synthetic antiferromagnets is crucial for computing-in-memory architectures, high-performance computing, and high-density storage applications. This study investigates the role of interlayer exchange coupling in magnetic tunnel junction structures, which are fundamental to spin-transfer torque magnetoresistive random access memory performance and stability. We analyze how interlayer exchange coupling influences magnetic stability and spin-transfer torque switching efficiency using finite element method simulations combined with the Landau–Lifshitz–Gilbert equation. Our findings reveal that optimizing interlayer exchange coupling not only enhances data retention and write/read speeds but also mitigates miniaturization challenges and improves device reliability in downscaled spin-transfer torque magnetoresistive random access memory technologies. The results further emphasize the strong dependence of interlayer exchange coupling on spacer properties, which dictate magnetic orientations and coupling energy, offering a strategic pathway to engineer more efficient and robust spin-transfer torque magnetoresistive random access memory devices. This work highlights the critical impact of magnetic coupling on the switching dynamics and long-term stability of spintronic memory, providing insights that pave the way for next-generation, high-performance memory solutions. • Finite-element LLG and drift–diffusion simulations to quantify spin-transfer torque and interlayer exchange coupling in magnetic tunnel junctions. • We simulate multilayer STT-MRAM to quantify how IEC shapes switching. • Tuning IEC controls back-hopping, switching speed, and reversal order. • Weak FL1–FL2 coupling yields two-step P → AP; strong coupling synchronizes. • Tungsten spacers switch faster than tantalum due to more efficient spin transport.