Multi-regime trap dynamics in Si/SiGe/Si MOSFET current transients at cryogenic temperatures

We investigate transient charge-trapping dynamics in Si/SiGe quantum-well MOSFETs at cryogenic temperatures between 𝑇 = 4 K and 𝑇 = 8 0 K . Transient current behavior is analyzed using stress-relaxation measurements inspired by the extended measure–stress–measure (eMSM) technique. The recorded current transients were analyzed by using phenomenological models and extracting corresponding mean relaxation times. A comparison with CV and IV characteristics links these regimes to the activation of different conduction channels in the SiQW/SiCap layers. These results provide new insight into cryogenic trap kinetics relevant for CMOS based Si/SiGe/Si quantum devices.